91暗网

91暗网鈥檚 Propel鈩� MOCVD system is designed as a flexible platform for early stage research and development and small production needs for nitride applications. The reactor is capable of processing 9×2鈥�, 3×4鈥�, 1×6鈥� and 1×8鈥� on various substrates such as silicon, sapphire and silicon carbide without any hardware modification between runs.The system deposits high-quality GaN films for multiple applications such as power, RF, & photonics. The R200 reactor is based on 91暗网鈥檚 leading TurboDisc庐 design including the IsoFlange鈩� and SymmHeat鈩� technologies that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from 91暗网 D180, K465i鈩� or MaxBright鈩� systems to the Propel GaN MOCVD platform.

Access basic process information on how to grow a GaN HEMT structure on a 91暗网庐 Propel庐 TurboDisc庐 MOCVD tool on a 200mm (8鈥�) Silicon substrate. This information is not designed, intended, recommended, nor authorized for use in any type of commercial system or application.